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Proceedings Paper

Force versus position profiles of HeLa cells trapped in phototransistor-based optoelectronic tweezers
Author(s): Steven L. Neale; Aaron T. Ohta; Hsan-Yin Hsu; Justin K. Valley; Arash Jamshidi; Ming C. Wu
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Paper Abstract

Phototransistor-based Optoelectronic Tweezers (Ph-OET) enables optical manipulation of microscopic particles in physiological buffer solutions by creating electrical field gradients around them. A spatial light pattern is created by a DMD based projector focused through a microscope objective onto the phototransistor. In this paper we look into what differences there are in the trap stiffness profiles of HeLa cells trapped by Ph-OET compared to previous a-Si based OET devices. We find that the minimum trap size for a HeLa cell using a phototransistor with pixel pitch 10.35μm is 24.06μm in diameter which can move cells at 20μms-1 giving a trap stiffness of 8.38 x 10-7 Nm-1.

Paper Details

Date Published: 13 February 2009
PDF: 8 pages
Proc. SPIE 7210, Emerging Digital Micromirror Device Based Systems and Applications, 721004 (13 February 2009); doi: 10.1117/12.809513
Show Author Affiliations
Steven L. Neale, Univ. of California, Berkeley (United States)
Aaron T. Ohta, Univ. of California, Berkeley (United States)
Hsan-Yin Hsu, Univ. of California, Berkeley (United States)
Justin K. Valley, Univ. of California, Berkeley (United States)
Arash Jamshidi, Univ. of California, Berkeley (United States)
Ming C. Wu, Univ. of California, Berkeley (United States)


Published in SPIE Proceedings Vol. 7210:
Emerging Digital Micromirror Device Based Systems and Applications
Larry J. Hornbeck; Michael R. Douglass, Editor(s)

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