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Proceedings Paper

Effect of thermal annealing on Cu-related green luminescence in ZnO
Author(s): V. Avrutin; M. A. Reshchikov; N. Izyumskaya; R. Shimada; S. W. Novak; H. Morkoç
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Paper Abstract

We have studied the effects of thermal annealing in air on photoluminescence of bulk ZnO crystals grown by hydrothermal technique and nominally undoped ZnO layers grown by molecular beam epitaxy on sapphire. Annealing of the samples in air at temperatures above 600°C resulted in a dramatic enhancement of the Cu-related green luminescence (GL) band peaking at 2.45 eV and having characteristic fine structure. The GL band quenched at temperatures above 300 K due to escape of holes from the excited state of the CuZn acceptor to the valence band. SIMS profiles revealed moderate increase of Al concentration and significant increase of Cu concentration in annealed samples. Exciton bound to hydrogen-related donor (the 3.363 eV line) quenched after annealing the sample at temperatures above 750ºC.

Paper Details

Date Published: 12 February 2009
PDF: 9 pages
Proc. SPIE 7217, Zinc Oxide Materials and Devices IV, 72170X (12 February 2009); doi: 10.1117/12.809477
Show Author Affiliations
V. Avrutin, Virginia Commonwealth Univ. (United States)
M. A. Reshchikov, Virginia Commonwealth Univ. (United States)
N. Izyumskaya, Virginia Commonwealth Univ. (United States)
R. Shimada, Virginia Commonwealth Univ. (United States)
S. W. Novak, Evans Analytical Group (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 7217:
Zinc Oxide Materials and Devices IV
Ferechteh Hosseini Teherani; Cole W. Litton; David J. Rogers, Editor(s)

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