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Proceedings Paper

Fringing field effects in semiconductor nanowire double heterostructures
Author(s): Jun Hu; Yang Liu; Cun-Zheng Ning; Robert Dutton; Sung-Mo Kang
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Paper Abstract

This paper investigates the electrostatics and carrier transport in nanowires with double heterostructures (DH). The particular interests include strong fringing field and weak screening effects resulting from the increased surface to volume ratio in nanowires. A general device simulator, PROPHET, is employed for a model nanowire structure with Al0.2Ga0.8N/GaN DH. Our simulations show that in general, the junction depletion width in the active region increases for nanowire based DH devices. The impacts of such effect on carrier injection in nanowire devices as well as the roles of forward biasing and material compositions are also investigated.

Paper Details

Date Published: 24 February 2009
PDF: 8 pages
Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72110Q (24 February 2009); doi: 10.1117/12.809320
Show Author Affiliations
Jun Hu, Univ. of California, Santa Cruz (United States)
Yang Liu, Stanford Univ. (United States)
Cun-Zheng Ning, Arizona State Univ. (United States)
Robert Dutton, Stanford Univ. (United States)
Sung-Mo Kang, Univ. of California, Santa Cruz (United States)
Univ. of California, Merced (United States)


Published in SPIE Proceedings Vol. 7211:
Physics and Simulation of Optoelectronic Devices XVII
Marek Osinski; Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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