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Proceedings Paper

Growth of high quality AlN on sapphire by using a low-temperature AlN interlayer
Author(s): Hsueh-Hsing Liu; Guan-Ting Chen; Yung-Ling Lan; Geng-Yen Lee; Jen-Inn Chyi
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Paper Abstract

Aluminum nitride is a material of great potential for high power electronic devices, UV photonic devices as well as acoustic devices. However, the lack of a good crystal growth technology for bulk material and substrate hinders the development of these AlN-based devices. While AlN has been successfully grown on sapphire substrate for some time, the presence of a large number of dislocations in the material is still a major barrier to overcome [1]. In this work, we demonstrate a low-dislocation-density AlN template on sapphire by inserting an AlN interlayer by metal-organic chemical vapor deposition. The main idea of our approach is to change the growth mode in the course of the epitaxial growth by decreasing growth temperature and changing V/III ratio. As the growth mode changes, dislocations tend to be redirected and/or form dipole half loops via annihilation processes [2]. The etch-pit-density of the AlN templates is reduced from 3.6×109 cm-2 to 1.7×109 cm-2. Accordingly, the full width at half maximum of the (0002) x-ray rocking curve is reduced from 37 arcsec to 12 arcsec. The result indicates that the AlN template has low screw and mixed type dislocations. AlGaN/GaN Schottky diodes fabricated on this high quality AlN template exhibit very high breakdown voltage (> 2000 V), which sets a record-high figure of merit of 1.15 GW/cm2.

Paper Details

Date Published: 16 February 2009
PDF: 7 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160I (16 February 2009); doi: 10.1117/12.809139
Show Author Affiliations
Hsueh-Hsing Liu, National Central Univ. (Taiwan)
Guan-Ting Chen, National Central Univ. (Taiwan)
Yung-Ling Lan, National Central Univ. (Taiwan)
Geng-Yen Lee, National Central Univ. (Taiwan)
Jen-Inn Chyi, National Central Univ. (Taiwan)
Academia Sinica (Taiwan)

Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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