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Proceedings Paper

Analysis of thermoelectric characteristics of AlGaN and InGaN semiconductors
Author(s): Hua Tong; Hongping Zhao; Vincent A Handara; Juan A Herbsommer; Nelson Tansu
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Paper Abstract

The thermoelectric properties of AlGaN and InGaN semiconductors are analyzed. In our analysis, the thermal conductivities, electrical conductivities, Seebeck coefficients, and figure of merits (Z*T) of AlGaN and InGaN semiconductors are computed. The electron transports in AlGaN and InGaN alloys are analyzed by solving Boltzmann transport equation, taking into account the dominant mechanisms of energy-dependent electron scatterings. Virtual crystal model is implemented to simulate the lattice thermal conductivity from phonon scattering for both AlGaN and InGaN alloys. The calculated Z*T is as high as 0.15 for optimized InGaN alloy at temperature around 1000 K. For optimized AlGaN composition, the Z*T of 0.06-0.07 can be achieved. The improved thermoelectric performance of ternary alloys over binary alloys can be attributed to the reduced lattice thermal conductivity.

Paper Details

Date Published: 24 February 2009
PDF: 11 pages
Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 721103 (24 February 2009); doi: 10.1117/12.809079
Show Author Affiliations
Hua Tong, Lehigh Univ. (United States)
Hongping Zhao, Lehigh Univ. (United States)
Vincent A Handara, Lehigh Univ. (United States)
Juan A Herbsommer, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 7211:
Physics and Simulation of Optoelectronic Devices XVII
Marek Osinski; Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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