Share Email Print

Proceedings Paper

Analysis of thermoelectric characteristics of AlGaN and InGaN semiconductors
Author(s): Hua Tong; Hongping Zhao; Vincent A Handara; Juan A Herbsommer; Nelson Tansu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The thermoelectric properties of AlGaN and InGaN semiconductors are analyzed. In our analysis, the thermal conductivities, electrical conductivities, Seebeck coefficients, and figure of merits (Z*T) of AlGaN and InGaN semiconductors are computed. The electron transports in AlGaN and InGaN alloys are analyzed by solving Boltzmann transport equation, taking into account the dominant mechanisms of energy-dependent electron scatterings. Virtual crystal model is implemented to simulate the lattice thermal conductivity from phonon scattering for both AlGaN and InGaN alloys. The calculated Z*T is as high as 0.15 for optimized InGaN alloy at temperature around 1000 K. For optimized AlGaN composition, the Z*T of 0.06-0.07 can be achieved. The improved thermoelectric performance of ternary alloys over binary alloys can be attributed to the reduced lattice thermal conductivity.

Paper Details

Date Published: 24 February 2009
PDF: 11 pages
Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 721103 (24 February 2009); doi: 10.1117/12.809079
Show Author Affiliations
Hua Tong, Lehigh Univ. (United States)
Hongping Zhao, Lehigh Univ. (United States)
Vincent A Handara, Lehigh Univ. (United States)
Juan A Herbsommer, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 7211:
Physics and Simulation of Optoelectronic Devices XVII
Marek Osinski; Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top