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Proceedings Paper

High speed analog-to-digital conversion with silicon photonics
Author(s): C. W. Holzwarth; R. Amatya; M. Araghchini; J. Birge; H. Byun; J. Chen; M. Dahlem; N. A. DiLello; F. Gan; J. L. Hoyt; E. P. Ippen; F. X. Kärtner; A. Khilo; J. Kim; M. Kim; A. Motamedi; J. S. Orcutt; M. Park; M. Perrott; M. A. Popovic; R. J. Ram; H. I. Smith; G. R. Zhou; S. J. Spector; T. M. Lyszczarz; M. W. Geis; D. M. Lennon; J. U. Yoon; M. E. Grein; R. T. Schulein; S. Frolov; A. Hanjani; J. Shmulovich
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Paper Abstract

Sampling rates of high-performance electronic analog-to-digital converters (ADC) are fundamentally limited by the timing jitter of the electronic clock. This limit is overcome in photonic ADC's by taking advantage of the ultra-low timing jitter of femtosecond lasers. We have developed designs and strategies for a photonic ADC that is capable of 40 GSa/s at a resolution of 8 bits. This system requires a femtosecond laser with a repetition rate of 2 GHz and timing jitter less than 20 fs. In addition to a femtosecond laser this system calls for the integration of a number of photonic components including: a broadband modulator, optical filter banks, and photodetectors. Using silicon-on-insulator (SOI) as the platform we have fabricated these individual components. The silicon optical modulator is based on a Mach-Zehnder interferometer architecture and achieves a VπL of 2 Vcm. The filter banks comprise 40 second-order microring-resonator filters with a channel spacing of 80 GHz. For the photodetectors we are exploring ion-bombarded silicon waveguide detectors and germanium films epitaxially grown on silicon utilizing a process that minimizes the defect density.

Paper Details

Date Published: 18 February 2009
PDF: 15 pages
Proc. SPIE 7220, Silicon Photonics IV, 72200B (18 February 2009); doi: 10.1117/12.808952
Show Author Affiliations
C. W. Holzwarth, Massachusetts Institute of Technology (United States)
R. Amatya, Massachusetts Institute of Technology (United States)
M. Araghchini, Massachusetts Institute of Technology (United States)
J. Birge, Massachusetts Institute of Technology (United States)
H. Byun, Massachusetts Institute of Technology (United States)
J. Chen, Massachusetts Institute of Technology (United States)
M. Dahlem, Massachusetts Institute of Technology (United States)
N. A. DiLello, Massachusetts Institute of Technology (United States)
F. Gan, Massachusetts Institute of Technology (United States)
J. L. Hoyt, Massachusetts Institute of Technology (United States)
E. P. Ippen, Massachusetts Institute of Technology (United States)
F. X. Kärtner, Massachusetts Institute of Technology (United States)
A. Khilo, Massachusetts Institute of Technology (United States)
J. Kim, Massachusetts Institute of Technology (United States)
M. Kim, Massachusetts Institute of Technology (United States)
A. Motamedi, Massachusetts Institute of Technology (United States)
J. S. Orcutt, Massachusetts Institute of Technology (United States)
M. Park, Massachusetts Institute of Technology (United States)
M. Perrott, Massachusetts Institute of Technology (United States)
M. A. Popovic, Massachusetts Institute of Technology (United States)
R. J. Ram, Massachusetts Institute of Technology (United States)
H. I. Smith, Massachusetts Institute of Technology (United States)
G. R. Zhou, Massachusetts Institute of Technology (United States)
S. J. Spector, MIT Lincoln Lab. (United States)
T. M. Lyszczarz, MIT Lincoln Lab. (United States)
M. W. Geis, MIT Lincoln Lab. (United States)
D. M. Lennon, MIT Lincoln Lab. (United States)
J. U. Yoon, MIT Lincoln Lab. (United States)
M. E. Grein, MIT Lincoln Lab. (United States)
R. T. Schulein, MIT Lincoln Lab. (United States)
S. Frolov, CyOptics (United States)
A. Hanjani, CyOptics (United States)
J. Shmulovich, CyOptics (United States)


Published in SPIE Proceedings Vol. 7220:
Silicon Photonics IV
Joel A. Kubby; Graham T. Reed, Editor(s)

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