Share Email Print

Proceedings Paper

Numerical investigation of blue InGaN light-emitting diodes with staggered quantum wells
Author(s): Bo-Ting Liou; Miao-Chan Tsai; Chih-Teng Liao; Sheng-Horng Yen; Yen-Kuang Kuo
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Effect of polarization on optical characteristics of blue InGaN LEDs with staggered QW are numerically investigated in this article by using APSYS simulation program. Specifically, band diagram, carrier distribution, and output power have been discussed. According to the simulation results, the structure of staggered QW is proposed to reduce the polarization-related effect; furthermore, the staggered QW structure together with thinner well width is beneficial for improvement of the output power of the blue InGaN SQW LEDs. In this work, the best optical performance is obtained when the quantum-well structure is designed as In0.20Ga0.80N (0.9 nm)-In0.26Ga0.74N (1.1 nm) owing mainly to the enhanced overlap of electron and hole wavefunctions inside the QW.

Paper Details

Date Published: 24 February 2009
PDF: 8 pages
Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72111D (24 February 2009); doi: 10.1117/12.808880
Show Author Affiliations
Bo-Ting Liou, Hsiuping Institute of Technology (Taiwan)
Miao-Chan Tsai, National Changhua Univ. of Education (Taiwan)
Chih-Teng Liao, National Changhua Univ. of Education (Taiwan)
Sheng-Horng Yen, National Changhua Univ. of Education (Taiwan)
Yen-Kuang Kuo, National Changhua Univ. of Education (Taiwan)

Published in SPIE Proceedings Vol. 7211:
Physics and Simulation of Optoelectronic Devices XVII
Marek Osinski; Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top