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Proceedings Paper

Integrated photodiodes complement the VCSEL platform
Author(s): Martin Grabherr; Philipp Gerlach; Roger King; Roland Jäger
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Paper Abstract

Many VCSEL based applications require optical feedback of the emitted light. E.g. light output monitor functions in transceivers are used to compensate for thermally induced power variation, power degradation, or even breakdown of pixels if logic for redundancy is available. In this case integrated photodiodes offer less complex assembly compared to widely used hybrid solutions, e.g. known in LC-TOSA assemblies. Especially for chip-on-board (COB) assembly and array configurations, integrated monitor diodes offer a simple and compact power monitoring possibility. For 850 nm VCSELs the integrated photodiodes can be placed between substrate and bottom-DBR, on top of the top-DBR, or inbetween the layer sequence of one DBR. Integrated intra-cavity photodiodes offer superior characteristics in terms of reduced sensitivity for spontaneously emitted light [1] and thus are very well suited for power monitoring or even endof- life (EOL) detection. We present an advanced device design for an intra-cavity photodiode and according performance data in comparison with competing approaches.

Paper Details

Date Published: 7 February 2009
PDF: 9 pages
Proc. SPIE 7229, Vertical-Cavity Surface-Emitting Lasers XIII, 72290E (7 February 2009); doi: 10.1117/12.808847
Show Author Affiliations
Martin Grabherr, Philips Technologie GmbH ULM Photonics (Germany)
Philipp Gerlach, Philips Technologie GmbH ULM Photonics (Germany)
Roger King, Philips Technologie GmbH ULM Photonics (Germany)
Roland Jäger, Philips Technologie GmbH ULM Photonics (Germany)


Published in SPIE Proceedings Vol. 7229:
Vertical-Cavity Surface-Emitting Lasers XIII
Kent D. Choquette; Chun Lei, Editor(s)

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