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Proceedings Paper

Metamorphic InGaAs telecom lasers on GaAs
Author(s): I. Tångring; Y. X. Song; D. H. Wu; Z. C. Niu; S. M. Wang; A. Larsson
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Paper Abstract

We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy. The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, as well as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocation dynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstrate pulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.

Paper Details

Date Published: 3 February 2009
PDF: 10 pages
Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 723003 (3 February 2009); doi: 10.1117/12.808787
Show Author Affiliations
I. Tångring, Chalmers Univ. of Technology (Sweden)
Y. X. Song, Chalmers Univ. of Technology (Sweden)
D. H. Wu, Institute of Semiconductors (China)
Z. C. Niu, Institute of Semiconductors (China)
S. M. Wang, Chalmers Univ. of Technology (Sweden)
A. Larsson, Chalmers Univ. of Technology (Sweden)

Published in SPIE Proceedings Vol. 7230:
Novel In-Plane Semiconductor Lasers VIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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