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Proceedings Paper

Array of GaN-based transverse junction blue light emitting diodes with regrown n-type regimes
Author(s): Shi-Hao Guol; H.-W. Huang; C.-S. Lin; J.-K. Sheu; C.-J. Tin; C.-H. Kuo; Jin-Wei Shi
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Paper Abstract

In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of InxGa1-xN/GaN multiple-quantumwells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.

Paper Details

Date Published: 17 February 2009
PDF: 8 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721629 (17 February 2009); doi: 10.1117/12.808713
Show Author Affiliations
Shi-Hao Guol, National Taiwan Univ. (Taiwan)
H.-W. Huang, National Central Univ. (Taiwan)
C.-S. Lin, National Central Univ. (Taiwan)
J.-K. Sheu, National Cheng-Kung Univ. (Taiwan)
C.-J. Tin, National Central Univ. (Taiwan)
C.-H. Kuo, National Central Univ. (Taiwan)
Jin-Wei Shi, National Central Univ. (Taiwan)

Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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