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Proceedings Paper

Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy
Author(s): Hongping Zhao; Hua Tong; Alexandra M. Driscoll; Muhammad Jamil; G. S. Huang; Nelson Tansu
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Paper Abstract

The growths of droplet-free narrow-bandgap InN semiconductors on Ga-polar and N-polar GaN templates on c-plane sapphire substrates were performed by pulsed-MOVPE growth techniques. Under the optimum In-polar InN growth conditions, the carrier mobility and n-type carrier concentration were measured as 681 cm2/(V.sec) and 1.5×1019 cm-3, respectively. The room-temperature photoluminescence measurements of optimized In-polar grown by pulsed-MOVPE technique resulted in peak wavelength at 0.76 eV. The growth of N-polar InN grown on the N-polar GaN template is discussed and compared to that of the In-polar InN.

Paper Details

Date Published: 18 February 2009
PDF: 6 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160L (18 February 2009); doi: 10.1117/12.808695
Show Author Affiliations
Hongping Zhao, Lehigh Univ. (United States)
Hua Tong, Lehigh Univ. (United States)
Alexandra M. Driscoll, Lehigh Univ. (United States)
Muhammad Jamil, Lehigh Univ. (United States)
G. S. Huang, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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