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Proceedings Paper

Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K
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Paper Abstract

In the paper, we describe the fabrication and performance characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs) by optical pumping and current injection. According to the employment of high-quality and high-reflectivity AlN/GaN DBRs in the whole structure, the lasing action of optically pumped GaN-based VCSELs with hybrid mirrors has been observed at room temperature. Due to the excellent results of optically pumped GaN-based VCSELs with hybrid mirrors, we further demonstrated the lasing behavior of GaN-based VCSELs by continuous-wave current injection at 77 K. The laser has one dominated blue wavelength located at 462 nm with a linewidth of about 0.15 nm and the threshold injection current at 1.4 mA. The divergence angle and polarization ratio of the GaN-based VCSELs with hybrid mirrors are about 11.7° and 80%, respectively. A larger spontaneous coupling efficiency of about 7.5×10-2 was also measured.

Paper Details

Date Published: 16 February 2009
PDF: 11 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72161A (16 February 2009); doi: 10.1117/12.808644
Show Author Affiliations
H. C. Kuo, National Chiao Tung Univ. (Taiwan)
S. W. Chen, National Chiao Tung Univ. (Taiwan)
T. T. Kao, National Chiao Tung Univ. (Taiwan)
C. C. Kao, National Chiao Tung Univ. (Taiwan)
J. R. Chen, National Chiao Tung Univ. (Taiwan)
T. C. Lu, National Chiao Tung Univ. (Taiwan)
S. C. Wang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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