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Proceedings Paper

Multi-color light-emitting diodes based on GaN microstructures
Author(s): M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai
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Paper Abstract

Monolithic multi-color light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are demonstrated. The microstructure is created through regrowth on SiO2 mask stripes along the [1¯100] direction and consists of (0001) and {11¯22} facets. The LEDs exhibit polychromatic emission, including white, due to the additive color mixture of facet-dependent emission colors. Altering the growth conditions and mask geometry easily controls the apparent emission color. Simulations predict high light extraction efficiencies due to their three-dimensional structures. Furthermore, we demonstrate that the apparent emission colors can externally be controlled over a wide spectral range that encompasses green to blue or white at a color temperature of 4000 K to blue along the Planckian locus. The controllability relies on the facet-dependent polychromatic emissions; the pulsed current operation with the appropriate duties varies their relative intensities and the consequent apparent colors without seriously affecting the total number of emitted photons, particularly for the blue to green variation. The proposed LEDs can be fabricated through a simple process and, therefore, may be a key device for advanced solid-state lighting.

Paper Details

Date Published: 19 February 2009
PDF: 12 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721624 (19 February 2009); doi: 10.1117/12.808641
Show Author Affiliations
M. Funato, Kyoto Univ. (Japan)
Y. Kawakami, Kyoto Univ. (Japan)
Y. Narukawa, Nichia Corp. (Japan)
T. Mukai, Nichia Corp. (Japan)


Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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