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Proceedings Paper

Staggered InGaN quantum well diode lasers emitting at 500 nm
Author(s): Hongping Zhao; Ronald A. Arif; Nelson Tansu
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Paper Abstract

Staggered InGaN quantum wells (QWs) are analyzed as gain media for laser diodes to extend the lasing wavelength towards 500 nm. The calculation of band structure is based on a 6-band k•p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. Staggered InGaN QWs with two-layer and three-layer step-function like In-content InGaN QWs structures are investigated to enhance the optical gain for laser diodes emitting in the green regime.

Paper Details

Date Published: 3 February 2009
PDF: 7 pages
Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300G (3 February 2009); doi: 10.1117/12.808561
Show Author Affiliations
Hongping Zhao, Lehigh Univ. (United States)
Ronald A. Arif, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 7230:
Novel In-Plane Semiconductor Lasers VIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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