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Proceedings Paper

Growth of staggered InGaN quantum well light-emitting diodes emitting at 520-525 nm employing graded temperature profile
Author(s): Hongping Zhao; Guangyu Liu; Xiaohang Li; Ronald A. Arif; G. S. Huang; Yik-Khoon Ee; Nelson Tansu
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Paper Abstract

Staggered InGaN quantum wells (QWs) are analyzed as improved active media based on a 6-band k•p method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. The growths of staggered InGaN QW emitting at green regime were conducted by employing graded temperature profile. The electroluminescence measurement shows a significant enhancement of the output power of the staggered InGaN QW LED as compared to that of the conventional InGaN QW LED.

Paper Details

Date Published: 3 February 2009
PDF: 7 pages
Proc. SPIE 7231, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII, 72310E (3 February 2009); doi: 10.1117/12.808542
Show Author Affiliations
Hongping Zhao, Lehigh Univ. (United States)
Guangyu Liu, Lehigh Univ. (United States)
Xiaohang Li, Lehigh Univ. (United States)
Ronald A. Arif, Lehigh Univ. (United States)
G. S. Huang, Lehigh Univ. (United States)
Yik-Khoon Ee, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 7231:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu, Editor(s)

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