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Proceedings Paper

Optimization of a high-power fiber-coupled diode-end-pumped Nd:YVO4 solid state laser
Author(s): Ashraf F. El-Sherif
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Paper Abstract

Nd:YVO4 is widely and commercially available laser material for diode-pumped lasers. Compared to Nd:YAG, Nd:YVO4 has a larger stimulated emission cross-section, larger absorption coefficient and broader absorption bandwidth. It has lower threshold and its output power is less sensitive to the drifting of the diode pump wavelength. In this paper a Nd:YVO4 crystal at 1064nm pumped with a high power diode laser at 808nm is modeled and simulated using LasCAD software tool package. These models investigate the optimum cavity design parameters (length of the cavity, output coupler reflectivity, the beam overlap key parameter and crystal dimensions). The geometry of the cavity is optimized to produce maximum TEM00 laser output, taking into consideration the thermal gradient on the rod structure. The cavity optimum configuration neglecting the insignificant effect of changing rod length was; 66mm in length, 90% of output coupler reflectivity. The pumping beam spot size affects on the laser output and the final optical conversion efficiency. Controlling the pumped spot size (wg) to be equal the mode spot size (wg) the maximum beam overlap efficiency and consequently the maximum optical slope efficiency with the highest laser output were achieved. The Nd:YVO4 Crystal with dimension of (1-3mm) diameter and (7-10mm) length with 1% doping concentration (1at.%) is the suitable choice for the DEPSS (Diode End Pumped Solid State ) laser configuration. A final optical conversion efficiency of 52% and a maximum slope efficiency of 54% were obtained.

Paper Details

Date Published: 28 February 2009
PDF: 15 pages
Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 71930O (28 February 2009); doi: 10.1117/12.808539
Show Author Affiliations
Ashraf F. El-Sherif, Egyptian Armed Forces (Egypt)


Published in SPIE Proceedings Vol. 7193:
Solid State Lasers XVIII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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