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Proceedings Paper

Nitride-based p-i-n photodetectors with Ni catalyst processing
Author(s): Chin-Hsiang Chen
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Paper Abstract

Nitride-based materials have been widely used for photodetectors, however, Nitride-based p-i-n photodetectors with the use of InGaN as the intrinsic layer to modify the cut-off wavelength from 360 to 500nm was few reported. In this study, the p-i-n structure photodetectors with a p-GaN layer, an InGaN active layer and an n-type GaN layer were fabricated successfully. The Ni catalysts technology was applied in p-GaN layer to enhance ohmic characteristics of ptype layer. It was found that the photo-to-dark contrast ratios at 0.5V bias are 51.83. The cut-off wavelength was around 375nm.

Paper Details

Date Published: 19 February 2009
PDF: 6 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162H (19 February 2009); doi: 10.1117/12.808536
Show Author Affiliations
Chin-Hsiang Chen, Cheng Shiu Univ. (Taiwan)


Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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