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Proceedings Paper

Micro ID marking for semiconductor chips: recent progress and future prospects
Author(s): Yoshiaki Kokushi; Yoshinori Saitou; Akira Mori
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Paper Abstract

When the frequency, pulse width, the beam profile, and energy density of the laser were controlled, then irradiated onto the silicon wafer with a beam of 15μm diameter or less, we observed that convex dot with a height of 100-300 nano- meters was formed. [1] The laser energy density through which the convex dot was formed was below 3.8J/cm2. In the semiconductor excitation laser, the pulse width was 40nsec-150nsec; the wavelength was 532 nm. [2]We developed equipment by using convex dots that was able to form 2D minute code of 16x16 dots in 100μm x100μm area in each IC chip on the silicon wafer without particle generation .

Paper Details

Date Published: 25 February 2009
PDF: 9 pages
Proc. SPIE 7202, Laser-based Micro- and Nanopackaging and Assembly III, 72020N (25 February 2009); doi: 10.1117/12.808503
Show Author Affiliations
Yoshiaki Kokushi, Komatsu Engineering Co., Ltd. (Japan)
Yoshinori Saitou, Komatsu Engineering Co., Ltd. (Japan)
Akira Mori, Komatsu Engineering Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 7202:
Laser-based Micro- and Nanopackaging and Assembly III
Wilhelm Pfleging; Yongfeng Lu; Kunihiko Washio; Willem Hoving; Jun Amako, Editor(s)

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