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Proceedings Paper

Growth and characterization of isotopic (nat)Ga(15)N by molecular-beam epitaxy
Author(s): Yong-zhao Yao; Takeshi Ohgaki; Kenji Matsumoto; Isao Sakaguchi; Yoshiki Wada; Hajime Haneda; Takashi Sekiguchi; Naoki Ohashi
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Paper Abstract

Isotopically enriched gallium nitride films, Ga14N and Ga15N, have been fabricated by molecular-beam epitaxy to study the effect of nitrogen atomic mass on structures and properties of GaN. Due to the isotopic substitution, the phonon frequency shift has been clearly observed by using Raman spectroscopy. The lattice constants of Ga15N differed from Ga14N, and, actually, the unit cell volume of Ga15N was approximately 0.07% less than that of Ga14N. Temperature-dependent photoluminescence measurements revealed that recombination mechanism in Ga14N and Ga15N was the same to each other in the temperature range of 4-50 K, and the band gap energy difference between them was found to be Eg15-Eg14=6.0±0.1 meV. This Eg difference is discussed in terms of volume shrinkage and change in phonon-electron interaction due to isotopic substitution.

Paper Details

Date Published: 19 February 2009
PDF: 7 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162D (19 February 2009); doi: 10.1117/12.808461
Show Author Affiliations
Yong-zhao Yao, National Institute for Materials Science (Japan)
Takeshi Ohgaki, National Institute for Materials Science (Japan)
Kenji Matsumoto, National Institute for Materials Science (Japan)
Isao Sakaguchi, National Institute for Materials Science (Japan)
Yoshiki Wada, National Institute for Materials Science (Japan)
Hajime Haneda, National Institute for Materials Science (Japan)
Takashi Sekiguchi, National Institute for Materials Science (Japan)
Naoki Ohashi, National Institute for Materials Science (Japan)


Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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