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Proceedings Paper

Improvement in light extraction efficiency of high brightness InGaN-based light emitting diodes
Author(s): Tzer-Perng Chen; Ta-Cheng Hsu; Chuan-yu Luo; Ming-Chi Hsu; Tsung-Xian Lee
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Paper Abstract

Light extraction efficiency is important to the brightness of LEDs. In this study, various texturing and roughing schemes were formed on the surface or interface of InGaN-based LED structure grown on sapphire substrate to investigate their effects. Throughout the research, temperature-dependent PL measurement was used to calculate the internal quantum efficiency so as to derive the light extraction efficiency. The light extraction efficiency is around 60 to 65% while the epitaxy and substrate are flat. On the other hand, the light extraction efficiency reaches an optimal value of around 85% while the p-GaN surface is textured and the substrate is patterned. However, for LED having only one-side surface texturing structure optimized on either p- or n-side, the light extraction efficiency can be already as high as 75 to 80%. Methods for further enhancement, such as use of ZnO nanorod on chip surface, were also discussed.

Paper Details

Date Published: 23 February 2009
PDF: 10 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72161T (23 February 2009); doi: 10.1117/12.808458
Show Author Affiliations
Tzer-Perng Chen, Epistar Corp. (Taiwan)
Ta-Cheng Hsu, Epistar Corp. (Taiwan)
Chuan-yu Luo, Epistar Corp. (Taiwan)
Ming-Chi Hsu, Epistar Corp. (Taiwan)
Tsung-Xian Lee, Epistar Corp. (Taiwan)


Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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