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Proceedings Paper

High wall-plug efficiency diode lasers with an Al-free active region at 975 nm
Author(s): N. Michel; M. Calligaro; Y. Robert; M. Lecomte; O. Parillaud; M. Krakowski; T. Westphalen; M. Traub
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Paper Abstract

In this work, we present high-wall plug efficiency (WPE) diode lasers at 975 nm, which are based on an Al-free active region. On a 2 mm x 100 μm laser, we have obtained a high maximum wall-plug efficiency of 69% at 10°C CW. Based on the same structure, we have realised a 1-cm bar, mounted on an active submount, and which delivers 70 W CW, together with 67% wall-plug efficiency. By improving the laser structure, we have obtained a higher WPE of 70% on an uncoated 2 mm x 100 μm broad area laser. We also present a new structure with a reduced fast-axis far-field of only 34° at 1/e2.

Paper Details

Date Published: 24 February 2009
PDF: 8 pages
Proc. SPIE 7198, High-Power Diode Laser Technology and Applications VII, 71981H (24 February 2009); doi: 10.1117/12.808426
Show Author Affiliations
N. Michel, Alcatel-Thales III-V Lab. (France)
M. Calligaro, Alcatel-Thales III-V Lab. (France)
Y. Robert, Alcatel-Thales III-V Lab. (France)
M. Lecomte, Alcatel-Thales III-V Lab. (France)
O. Parillaud, Alcatel-Thales III-V Lab. (France)
M. Krakowski, Alcatel-Thales III-V Lab. (France)
T. Westphalen, Fraunhofer-Institut für Lasertechnik (Germany)
M. Traub, Fraunhofer-Institut für Lasertechnik (Germany)


Published in SPIE Proceedings Vol. 7198:
High-Power Diode Laser Technology and Applications VII
Mark S. Zediker, Editor(s)

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