Share Email Print

Proceedings Paper

High wall-plug efficiency diode lasers with an Al-free active region at 975 nm
Author(s): N. Michel; M. Calligaro; Y. Robert; M. Lecomte; O. Parillaud; M. Krakowski; T. Westphalen; M. Traub
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this work, we present high-wall plug efficiency (WPE) diode lasers at 975 nm, which are based on an Al-free active region. On a 2 mm x 100 μm laser, we have obtained a high maximum wall-plug efficiency of 69% at 10°C CW. Based on the same structure, we have realised a 1-cm bar, mounted on an active submount, and which delivers 70 W CW, together with 67% wall-plug efficiency. By improving the laser structure, we have obtained a higher WPE of 70% on an uncoated 2 mm x 100 μm broad area laser. We also present a new structure with a reduced fast-axis far-field of only 34° at 1/e2.

Paper Details

Date Published: 24 February 2009
PDF: 8 pages
Proc. SPIE 7198, High-Power Diode Laser Technology and Applications VII, 71981H (24 February 2009); doi: 10.1117/12.808426
Show Author Affiliations
N. Michel, Alcatel-Thales III-V Lab. (France)
M. Calligaro, Alcatel-Thales III-V Lab. (France)
Y. Robert, Alcatel-Thales III-V Lab. (France)
M. Lecomte, Alcatel-Thales III-V Lab. (France)
O. Parillaud, Alcatel-Thales III-V Lab. (France)
M. Krakowski, Alcatel-Thales III-V Lab. (France)
T. Westphalen, Fraunhofer-Institut für Lasertechnik (Germany)
M. Traub, Fraunhofer-Institut für Lasertechnik (Germany)

Published in SPIE Proceedings Vol. 7198:
High-Power Diode Laser Technology and Applications VII
Mark S. Zediker, Editor(s)

© SPIE. Terms of Use
Back to Top