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Proceedings Paper

Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes
Author(s): H, Amano; K. Nagamatsu; K. Takeda; T. Mori; H. Tsuzuki; M. Iwaya; S. Kamiyama; I. Akasaki
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Paper Abstract

A microstructure in AlGaN with a whole compositional range on an AlN/sapphire template is systematically investigated. At the interface between AlGaN and AlN, misfit dislocation density increases with Ga composition in AlGaN. However, most misfit dislocations bend owing to the compressive stress and form loops, by which threading dislocation density is markedly reduced if the thickness exceeds several microns. The effective acceptor energy of Mg in Al0.5Ga0.5N is found to depend on Mg concentration with a negative one-third power. A SiO2/AlN dielectric multilayer mirror is very effective for controlling the reflectivity of the Fabry-Perot resonator mirrors at the cleaved edge of the ultraviolet (UV) laser diodes (LDs). A UV LD with an emission wavelength of 358 nm shows a threshold current density as low as 3.9 KA/cm2 at room temperature.

Paper Details

Date Published: 17 February 2009
PDF: 12 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72161B (17 February 2009); doi: 10.1117/12.808381
Show Author Affiliations
H, Amano, Meijo Univ. (Japan)
K. Nagamatsu, Meijo Univ. (Japan)
K. Takeda, Meijo Univ. (Japan)
T. Mori, Meijo Univ. (Japan)
H. Tsuzuki, Meijo Univ. (Japan)
M. Iwaya, Meijo Univ. (Japan)
S. Kamiyama, Meijo Univ. (Japan)
I. Akasaki, Meijo Univ. (Japan)

Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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