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Proceedings Paper

Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures
Author(s): S. Horst; S. Chatterjee; K. Hantke; P. J. Klar; C. Lange; I. Nemeth; M. Schwalm; W. Stolz; K. Volz; C. Bückers; A. D. Thränhardt; S. W. Koch; W. Rühle; S. R. Johnson; J.-B. Wang; Y.-H. Zhang
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Paper Abstract

The optical emission and gain properties of Ga(AsSb) quantum-islands are investigate. These islands form during growth in a self-organized process in a series of Ga(AsSb)/GaAs/(AlGa)As heterostructures, resulting in an additional in-plane hole confinement of several hundreds of meV. The shape of the in-plane confinement potential is nearly parabolic and thus yields almost equidistant hole energy levels. Transmission electron microscopy reveals that the quantum islands are 100nm in diameter and exhibit an in-plane variation of the Sb concentration of more than 30 %. Up to seven bound hole states are observed in the photoluminescence spectra. Time-resolved photoluminescence data are shown as function of excitation density, lattice temperature, and excitation photon energy and reveal fast carrier capture into and relaxation within the quantum islands. Furthermore, the optical gain is measured using the variable stripe-length method and the advantages of such structures as active laser material are discussed.

Paper Details

Date Published: 7 February 2009
PDF: 8 pages
Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 72141A (7 February 2009); doi: 10.1117/12.808364
Show Author Affiliations
S. Horst, Philipps-Univ. Marburg (Germany)
S. Chatterjee, Philipps-Univ. Marburg (Germany)
K. Hantke, Philipps-Univ. Marburg (Germany)
P. J. Klar, Philipps-Univ. Marburg (Germany)
C. Lange, Philipps-Univ. Marburg (Germany)
I. Nemeth, Philipps-Univ. Marburg (Germany)
M. Schwalm, Philipps-Univ. Marburg (Germany)
W. Stolz, Philipps-Univ. Marburg (Germany)
K. Volz, Philipps-Univ. Marburg (Germany)
C. Bückers, Philipps-Univ. Marburg (Germany)
A. D. Thränhardt, Philipps-Univ. Marburg (Germany)
S. W. Koch, Philipps-Univ. Marburg (Germany)
W. Rühle, Philipps-Univ. Marburg (Germany)
S. R. Johnson, Arizona State Univ. (United States)
J.-B. Wang, Arizona State Univ. (United States)
Y.-H. Zhang, Arizona State Univ. (United States)

Published in SPIE Proceedings Vol. 7214:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII
Kong-Thon Tsen; Jin-Joo Song; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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