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Proceedings Paper

Properties of organic-inorganic hybrid thin film transistors with ZnO active layer on PES substrates
Author(s): Su Cheol Gong; Byung Chul Yoo; Ik Sub Shin; Hyungtag Jeon; Hyung-Ho Park; Ho Jung Chang
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Paper Abstract

The flexible organic-inorganic thin film transistors (OITFTs) were fabricated with the structure of Al/ZnO/PVP/Al on PES [polyether sulfone] flexible substrate. PVP [poly-4-vinylphenol] organic gate insulator was coated on Al/PES film by the spin coating method. ZnO active channel layer was deposited on PVP/Si substrate by using atomic layer deposition (ALD) at various temperatures from 80 ~ 140 °C. The structural and electrical properties of ZnO films were analyzed by X-ray diffraction (XRD) and hall-effect measurement system. The carrier concentration and resistivity of ZnO film deposited at 100 °C were found to be about 1017 and 37.7Ω•cm, respectively. The field effect mobility (μ) and threshold voltage (VTH) of the prepared OITFT were about 0.01 cm2/V•s and 12 V, respectively. The I on/off switching ratio was about 104.

Paper Details

Date Published: 12 February 2009
PDF: 6 pages
Proc. SPIE 7217, Zinc Oxide Materials and Devices IV, 72170V (12 February 2009); doi: 10.1117/12.808357
Show Author Affiliations
Su Cheol Gong, Dankook Univ. (Korea, Republic of)
Byung Chul Yoo, Dankook Univ. (Korea, Republic of)
Ik Sub Shin, Dankook Univ. (Korea, Republic of)
Hyungtag Jeon, Hanyang Univ. (Korea, Republic of)
Hyung-Ho Park, Yonsei Univ. (Korea, Republic of)
Ho Jung Chang, Dankook Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7217:
Zinc Oxide Materials and Devices IV
Ferechteh Hosseini Teherani; Cole W. Litton; David J. Rogers, Editor(s)

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