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Proceedings Paper

Dilute nitride-based III-V heterostructures for unhindered carrier transport in quantum-confined p-i-n solar cells
Author(s): A. Alemu; A. Freundlich
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Paper Abstract

Successions of dilute nitride-based III-V semiconductor staircase like superlattice structures are incorporated in the intrinsic region of common III-V p-i-n solar cells. The choices of material system and energy band design are tuned towards facilitating the collection of all photo-generated carriers while minimizing recombination losses. Band structure calculations including strain effects, band anti-crossing models and transfer matrix methods are used to theoretically demonstrate optimum conditions for enhanced vertical transport. High electron quantum tunneling escape probability, together with a free movement of quasi-3 D holes, is predicted here to result in enhanced PV device performance. Furthermore, the increase in electron effective mass due to the incorporation of N translates in enhanced absorptive properties, ideal for PV application.

Paper Details

Date Published: 24 February 2009
PDF: 4 pages
Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72110M (24 February 2009); doi: 10.1117/12.808335
Show Author Affiliations
A. Alemu, Univ. of Houston (United States)
A. Freundlich, Univ. of Houston (United States)

Published in SPIE Proceedings Vol. 7211:
Physics and Simulation of Optoelectronic Devices XVII
Marek Osinski; Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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