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Proceedings Paper

Progress in high-power high-efficiency VCSEL arrays
Author(s): Jean-Francois Seurin; Guoyang Xu; Viktor Khalfin; Alexander Miglo; James D. Wynn; Prachi Pradhan; Chuni L. Ghosh; L. Arthur D'Asaro
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Paper Abstract

We present recent results on high-power, high-efficiency two-dimensional vertical-cavity surface-emitting laser (VCSEL) arrays emitting around 808nm. Selectively oxidized, top-emitting single VCSEL emitters with 49% power conversion efficiency were developed as the basic building block of these arrays. Because of the strong GaAs absorption at the 808nm wavelength, the traditional bottom-emitting, substrate-emission configuration is not possible for large arrays that require efficient heat dissipation. The processing and packaging challenges are discussed. We demonstrate 3mm x 3mm arrays and 5mm x 5mm arrays with the GaAs substrate completely removed and mounted on diamond submounts. These arrays emit more than 50W and 120W, respectively, and exhibit a maximum powerconversion efficiency of 42%.

Paper Details

Date Published: 7 February 2009
PDF: 11 pages
Proc. SPIE 7229, Vertical-Cavity Surface-Emitting Lasers XIII, 722903 (7 February 2009); doi: 10.1117/12.808294
Show Author Affiliations
Jean-Francois Seurin, Princeton Optronics (United States)
Guoyang Xu, Princeton Optronics (United States)
Viktor Khalfin, Princeton Optronics (United States)
Alexander Miglo, Princeton Optronics (United States)
James D. Wynn, Princeton Optronics (United States)
Prachi Pradhan, Princeton Optronics (United States)
Chuni L. Ghosh, Princeton Optronics (United States)
L. Arthur D'Asaro, Princeton Optronics (United States)

Published in SPIE Proceedings Vol. 7229:
Vertical-Cavity Surface-Emitting Lasers XIII
Kent D. Choquette; Chun Lei, Editor(s)

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