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Proceedings Paper

Gain dynamics in p-doped InGaAs quantum dot amplifiers from room to cryogenic temperatures
Author(s): P. Borri; V. Cesari; M. Rossetti; A. Fiore; W. Langbein
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Paper Abstract

We have compared the gain dynamics of the ground state excitonic transition between undoped and p-doped electrically-pumped InGaAs quantum-dot optical amplifiers, for temperatures from 300 K to 20 K. A pump-probe differential transmission technique in heterodyne detection with sub-picosecond time resolution was used. The comparison shows that in the gain regime at high temperatures the recovery dynamics of the p-doped sample is slower than in the undoped device operating at the same modal gain, due to a reduced electron reservoir in the excited states. Conversely, at 20 K the initial gain dynamics is faster in the p-doped device due to hole-hole scattering.

Paper Details

Date Published: 24 February 2009
PDF: 7 pages
Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72110Z (24 February 2009); doi: 10.1117/12.808206
Show Author Affiliations
P. Borri, Cardiff Univ. (United Kingdom)
V. Cesari, Cardiff Univ. (United Kingdom)
M. Rossetti, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
A. Fiore, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
W. Langbein, Cardiff Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 7211:
Physics and Simulation of Optoelectronic Devices XVII
Marek Osinski; Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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