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Proceedings Paper

Ultra-narrow long green lines for laser crystallization of Si
Author(s): Mikhail Ivanenko; Klaus Bagschik; Yuri Miklyaev; Alexei Mikhailov; Wyacheslaw Grimm; Vitalij Lissotschenko
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Paper Abstract

Advanced laser crystallization of Si films for large flat panel displays requires a narrow very homogeneous focus with at least 235 mm length and high depth of focus. Earlier we have reported on the development and application of an ultranarrow (5-9 μm) homogeneous line-shaped laser focus of 60 mm length for sequential lateral solidification (SLS) of Si. Key element of our line shaping system is an anisotropic mode transformation of the 2nd green harmonic of a Nd:YAG laser beam and its following homogenization for the long focus axis. The design and built-up of a much longer "green line" requires innovative optical approaches and very high precision optical manufacturing. We analyze in detail different process requirements, their physical compatibility (e.g. line width vs. depth of focus) and practical feasibility. To reach high energy densities in the long lines we design optical schemas bundling up to 8 beams of separate lasers.

Paper Details

Date Published: 13 February 2009
PDF: 7 pages
Proc. SPIE 7194, Laser Resonators and Beam Control XI, 719402 (13 February 2009); doi: 10.1117/12.808196
Show Author Affiliations
Mikhail Ivanenko, LIMO Lissotschenko Mikrooptik GmbH (Germany)
Klaus Bagschik, LIMO Lissotschenko Mikrooptik GmbH (Germany)
Yuri Miklyaev, LIMO Lissotschenko Mikrooptik GmbH (Germany)
Alexei Mikhailov, LIMO Lissotschenko Mikrooptik GmbH (Germany)
Wyacheslaw Grimm, LIMO Lissotschenko Mikrooptik GmbH (Germany)
Vitalij Lissotschenko, LIMO Lissotschenko Mikrooptik GmbH (Germany)


Published in SPIE Proceedings Vol. 7194:
Laser Resonators and Beam Control XI
Alexis V. Kudryashov; Alan H. Paxton; Vladimir S. Ilchenko; Lutz Aschke, Editor(s)

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