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Proceedings Paper

Low-cycle fatigue testing of silicon resonators
Author(s): Pierre-Olivier Theillet; Olivier Pierron
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Paper Abstract

This paper presents a testing methodology for measuring the low cycle fatigue properties of single-crystal silicon thin films using kHz-frequency resonators. The dynamic behavior of the fatigue structures is thoroughly characterized to allow accurate measurements of stresses (±0.1 GPa) and fatigue lives (±250 cycles). The tests consist of applying successive bursts of small numbers of cycles (as low as ~500 cycles) and measuring the resonant frequency in between each burst. Continuous damage accumulation, beginning after the first burst, is observed based on the decrease in resonant frequency of the resonant structure.

Paper Details

Date Published: 9 February 2009
PDF: 10 pages
Proc. SPIE 7206, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS and Nanodevices VIII, 72060B (9 February 2009); doi: 10.1117/12.808180
Show Author Affiliations
Pierre-Olivier Theillet, Georgia Institute of Technology (United States)
Olivier Pierron, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 7206:
Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS and Nanodevices VIII
Richard C. Kullberg; Rajeshuni Ramesham, Editor(s)

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