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Proceedings Paper

Midinfrared (lambda = 3.6 um) LEDs and arrays on InGaAsSb with photonic crystals
Author(s): B. A. Matveev; Yu. M. Zadiranov; A. L. Zakgeim; N. V. Zotova; N. D. Il'inskaya; S. A. Karandashev; M. A. Remennyy; N. M. Stus'; A. A. Usikova; O. A. Usov; A. E. Cherniakov
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Paper Abstract

InGaAsSb narrow gap heterostructures with p-InAsSbP claddings grown onto heavily doped n+-InAs substrates have been processed into 70 μm wide square mesas lined in a 1x4 array with individual addressing of elements. We report I-V, L-I characteristics of the array as well as IR images allowing characterization of cross talk, reflectance of the contacts and apparent temperatures in the spectral range around 3.6 μm. Reflectance and outcoupling efficiency is presented for photonics crystal structures with regard to their implementation in LED assemblies.

Paper Details

Date Published: 16 February 2009
PDF: 7 pages
Proc. SPIE 7223, Photonic and Phononic Crystal Materials and Devices IX, 72231B (16 February 2009); doi: 10.1117/12.808130
Show Author Affiliations
B. A. Matveev, Ioffe Physical-Technical Institute (Russian Federation)
Yu. M. Zadiranov, Ioffe Physical-Technical Institute (Russian Federation)
A. L. Zakgeim, Ioffe Physical-Technical Institute (Russian Federation)
N. V. Zotova, Ioffe Physical-Technical Institute (Russian Federation)
N. D. Il'inskaya, Ioffe Physical-Technical Institute (Russian Federation)
S. A. Karandashev, Ioffe Physical-Technical Institute (Russian Federation)
M. A. Remennyy, Ioffe Physical-Technical Institute (Russian Federation)
N. M. Stus', Ioffe Physical-Technical Institute (Russian Federation)
A. A. Usikova, Ioffe Physical-Technical Institute (Russian Federation)
O. A. Usov, Ioffe Physical-Technical Institute (Russian Federation)
A. E. Cherniakov, Ioffe Physical-Technical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 7223:
Photonic and Phononic Crystal Materials and Devices IX
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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