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Proceedings Paper

Ge-on-silicon vertical PIN photodetectors
Author(s): Johann Osmond; Laurent Vivien; Jean-Marc Fédéli; Delphine Marris-Morini; Paul Crozat; Jean-François Damlencourt; Eric Cassan; Juliette Mangeney; Yves Lecunff; Suzanne Laval
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Paper Abstract

This paper reports on fabrication and characterization of two kinds of photodetectors: surface illuminated and waveguide integrated vertical PIN Ge/Si photodetectors for operation at optical telecommunication wavelengths. The measured -3dB bandwidth of surface illuminated photodetectors is 40 GHz under 5 V reverse bias at 1.53 µm wavelength. For waveguide integrated photodetectors, the measured -3dB bandwidth at 1.53 µm wavelength under 4 V reverse bias is 42 GHz.

Paper Details

Date Published: 18 February 2009
PDF: 10 pages
Proc. SPIE 7220, Silicon Photonics IV, 72200F (18 February 2009); doi: 10.1117/12.807947
Show Author Affiliations
Johann Osmond, Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS (France)
Laurent Vivien, Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS (France)
Jean-Marc Fédéli, CEA-DRT, LETI (France)
Delphine Marris-Morini, Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS (France)
Paul Crozat, Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS (France)
Jean-François Damlencourt, CEA-DRT, LETI (France)
Eric Cassan, Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS (France)
Juliette Mangeney, Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS (France)
Yves Lecunff, CEA-DRT, LETI (France)
Suzanne Laval, Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS (France)


Published in SPIE Proceedings Vol. 7220:
Silicon Photonics IV
Joel A. Kubby; Graham T. Reed, Editor(s)

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