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Proceedings Paper

High-power DBR laser diodes grown in a single epitaxial step
Author(s): Linglin Jiang; Martin Achtenhagen; Nuditha V. Amarasinghe; Preston Young; Gary Evans
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Paper Abstract

Spectral and output power data of distributed Bragg reflector lasers emitting in the technologically important wavelength range from 780 nm to 1083 nm are presented. These devices are fabricated in a single molecular beam epitaxy growth step, and the gratings are defined by holographic interferometry. Spectral dependencies on the grating and gain section lengths are systematically investigated. Experimental data for the side-mode suppression ratio, mode spacing, and thermal wavelength shift are given for devices emitting in the near infrared wavelength range between 780 nm and 1083 nm.

Paper Details

Date Published: 3 February 2009
PDF: 9 pages
Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72301F (3 February 2009); doi: 10.1117/12.807872
Show Author Affiliations
Linglin Jiang, Photodigm, Inc. (United States)
Martin Achtenhagen, Photodigm, Inc. (United States)
Nuditha V. Amarasinghe, Photodigm, Inc. (United States)
Preston Young, Photodigm, Inc. (United States)
Gary Evans, Photodigm, Inc. (United States)

Published in SPIE Proceedings Vol. 7230:
Novel In-Plane Semiconductor Lasers VIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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