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Proceedings Paper

Large-aperture excilamps for microelectronic applications
Author(s): Dmitry V. Schitz; Mikhail I. Lomaev; Victor S. Skakun; Victor F. Tarasenko
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Paper Abstract

A windowless excilamp, a xenon excilamp with the high specific power of radiation and an air-cooling KrCl excilamp for microelectronic applications are described. The excilamps have the total radiating surface up to 900 cm2. The VUV specific average power of a windowless excilamp is 3 mW/cm2 and 5 mW/cm2 for argon (λ ~ 126 nm) and krypton (λ~146 nm) accordingly at distance of 3 cm from the emitting surface. The xenon excilamp (λ ~ 172 nm) has 50 W of the average total VUV power and 120 mW/cm2 of density and the large-aperture air-cooling KrCl (λ ~222 nm) excilamp has 30 mW/cm2 of the radiation density and the radiation homogeneity 12 %.

Paper Details

Date Published: 24 February 2009
PDF: 6 pages
Proc. SPIE 7201, Laser Applications in Microelectronic and Optoelectronic Manufacturing VII, 720119 (24 February 2009); doi: 10.1117/12.807822
Show Author Affiliations
Dmitry V. Schitz, Institute of High Current Electronics (Russian Federation)
Mikhail I. Lomaev, Institute of High Current Electronics (Russian Federation)
Victor S. Skakun, Institute of High Current Electronics (Russian Federation)
Victor F. Tarasenko, Institute of High Current Electronics (Russian Federation)


Published in SPIE Proceedings Vol. 7201:
Laser Applications in Microelectronic and Optoelectronic Manufacturing VII
Michel Meunier; Andrew S. Holmes; Hiroyuki Niino; Bo Gu, Editor(s)

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