Share Email Print
cover

Proceedings Paper

Fault protection of broad-area laser diodes
Author(s): J. H. Jacob; R. Petr; M. A. Jaspan; S. D. Swartz; M. T. Knapczyk; A. M. Flusberg; A. K. Chin; I. Smilanski
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Detailed reliability studies of high-power, CW, broad-area, GaAs-based laser- diodes were performed. Optical and electrical transients occurring prior to device failure by catastrophic optical-damage (COD) were observed. These transients were correlated with COD formation as observed in laser diodes with an optical window in the n-side electrode. In addition, custom electronics were designed to fault-protect the laser diodes during aging tests, i.e. each time a transient (fault) was detected, the operating current was temporarily cut off within 4μs of fault detection. The lifetime of fault-protected 808-nm laser-diode bars operated at a constant current of 120A (~130W) and 35°C exceeded similar unprotected devices by factors of 2.

Paper Details

Date Published: 24 February 2009
PDF: 10 pages
Proc. SPIE 7198, High-Power Diode Laser Technology and Applications VII, 719815 (24 February 2009); doi: 10.1117/12.807717
Show Author Affiliations
J. H. Jacob, Science Research Lab., Inc. (United States)
R. Petr, Science Research Lab., Inc. (United States)
M. A. Jaspan, Science Research Lab., Inc. (United States)
S. D. Swartz, Science Research Lab., Inc. (United States)
M. T. Knapczyk, Science Research Lab., Inc. (United States)
A. M. Flusberg, Science Research Lab., Inc. (United States)
A. K. Chin, Aland Chin, LLC (United States)
I. Smilanski, Science Research Lab., Inc. (United States)


Published in SPIE Proceedings Vol. 7198:
High-Power Diode Laser Technology and Applications VII
Mark S. Zediker, Editor(s)

© SPIE. Terms of Use
Back to Top