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Proceedings Paper

Surface control of GaN alloys for photonic and electronic devices
Author(s): Tamotsu Hashizume; Nanako Shiozaki; Kota Ohi
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Paper Abstract

Surface characterization and control technologies were applied to GaN and AlGaN surfaces. It was found that a unique "air-gap CV" technique is effective in evaluating surface state density on free AlGaN surfaces. A photoelectrochemical process, utilizing a mixed solution of propylene glycol and tartaric acid, was employed to form a thin oxide layer on GaN and AlGaN. We observed an enhancement of drain current in the AlGaN/GaN HEMT having a narrow channel width of 200 nm after the oxidation of the channel walls by the electrochemical process. To improve the uniformity of the effective electric field in the channel, a multi-mesa-channel (MMC) AlGaN/GaN HEMT has been proposed and developed. With forming a periodic trench just under the gate region by an ECR-plasma assisted dry etching, the MMC HEMT has parallel mesa-shaped channels with 2-dimensional electron gas (2DEG) surrounded by the top- and side-gate electrodes.

Paper Details

Date Published: 18 February 2009
PDF: 8 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160U (18 February 2009); doi: 10.1117/12.807587
Show Author Affiliations
Tamotsu Hashizume, Hokkaido Univ. (Japan)
Nanako Shiozaki, Hokkaido Univ. (Japan)
Kota Ohi, Hokkaido Univ. (Japan)


Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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