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Proceedings Paper

Designing phonons for active use in terahertz devices
Author(s): H. C. Liu; C. Y. Song; Z. R Wasilewski; J. A. Gupta; M. Buchanan
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Paper Abstract

Semiconductor nanostructures, such as quantum wells and quantum dots, are well known, and some have been incorporated in applications. Here we propose a new general approach to make use of polar optical phonons in quantum wells for terahertz (THz) devices. As the first example, we show the coupling of phonon and intersubband transition leading to Fano resonance in photocurrent spectra. We investigate the phenomenon experimentally in specially designed GaAs/AlGaAs quantum well infrared photodetectors. Finally, we discuss the future research and potentials.

Paper Details

Date Published: 26 January 2009
PDF: 6 pages
Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 72220X (26 January 2009); doi: 10.1117/12.807532
Show Author Affiliations
H. C. Liu, National Research Council Canada (Canada)
C. Y. Song, National Research Council Canada (Canada)
Z. R Wasilewski, National Research Council Canada (Canada)
J. A. Gupta, National Research Council Canada (Canada)
M. Buchanan, National Research Council Canada (Canada)

Published in SPIE Proceedings Vol. 7222:
Quantum Sensing and Nanophotonic Devices VI
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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