Share Email Print
cover

Proceedings Paper

Impact of filamentation on the far-field of high power broad ridge (Al,In)GaN laser diodes
Author(s): Harald Braun; Stephan Rogowsky; Ulrich T. Schwarz; Stefanie Brüninghof; Alfred Lell; Uwe Strauß
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

For broad ridge (Al,In)GaN laser diodes, which are inevitable for high output power applications in the near-UV to blue spectral region, filaments appear, which influence the far-field beam quality. We present an extensive study of the optical mode profile of conventional c-plane LD test structures with ridge widths from 1.5 to 10 micrometers. The broad ridge samples are optimized to reach several hundred milliwatt of cw output power. Spectral and spatial resolved near- and far-field measurements show, that the characteristic lateral multi-lobed far-field pattern can be interpreted as superposition of interfering phase-locked filaments in the ridge waveguide.

Paper Details

Date Published: 3 February 2009
PDF: 9 pages
Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300F (3 February 2009); doi: 10.1117/12.807454
Show Author Affiliations
Harald Braun, Univ. of Regensburg (Germany)
Stephan Rogowsky, Univ. of Regensburg (Germany)
Ulrich T. Schwarz, Univ. of Regensburg (Germany)
Stefanie Brüninghof, OSRAM Opto Semiconductors GmbH (Germany)
Alfred Lell, OSRAM Opto Semiconductors GmbH (Germany)
Uwe Strauß, OSRAM Opto Semiconductors GmbH (Germany)


Published in SPIE Proceedings Vol. 7230:
Novel In-Plane Semiconductor Lasers VIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

© SPIE. Terms of Use
Back to Top