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Proceedings Paper

Growth of high-quality large GaN crystal by Na flux LPE method
Author(s): F. Kawamura; M. Imade; M. Yoshimura; Y. Mori; Y. Kitaoka; T. Sasaki
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Paper Abstract

We have been developing the technology that enables us to grow high quality and large GaN single crystals for producing high quality GaN single crystal substrates using Na flux method. In 2005, we have succeeded in the growth of 2-inch GaN substrates with low dislocation density (< 105 cm-2) by applying the Liquid Phase Epitaxy to the Na flux method. Recently, we reported that dislocation density lower than the order of 104 cm-2 and the growth rate more than 20 um/h is achievable in the Na flux LPE. This achievement was due to introducing some new techniques; such as thermal convection, mechanical stirring, addition of carbon additive, development of new growth apparatus and so on, to the Na flux LPE.

Paper Details

Date Published: 18 February 2009
PDF: 13 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160B (18 February 2009); doi: 10.1117/12.807434
Show Author Affiliations
F. Kawamura, Osaka Univ. (Japan)
M. Imade, Osaka Univ. (Japan)
M. Yoshimura, Osaka Univ. (Japan)
Y. Mori, Osaka Univ. (Japan)
Y. Kitaoka, Osaka Univ. (Japan)
T. Sasaki, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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