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Proceedings Paper

High-power AlGaN/GaN HFETs on Si substrates for power-switching applications
Author(s): Nariaki Ikeda; Jiang Lee; Syuusuke Kaya; Masayuki Iwami; Takehiko Nomura; Sadahiro Katoh
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Paper Abstract

Epitaxial growth technology for GaN devices on large-diameter Si substrate has been studied in this paper, which is essential for device cost reduction. In an effort to improve the buffer breakdown voltage for increasing the breakdown voltage of the device, carbon concentration in the GaN layer was controlled to find that the carbon concentration significantly contributed to buffer breakdown voltage improvements. Device performance was evaluated for the devices with an AlGaN/GaN HFET structure on Si substrate, and it was shown that the performance was equivalent to that of the device on sapphire substrate. A large-area device having this structure was fabricated in order to confirm its potential as a power device, and a current capacity of 120 A or more and a breakdown voltage of 1.8 kV were achieved. On the other hand, with respect to the problematical issue of current collapse in GaN HFETs, the HFET structure on Si substrate has resulted in a significant improvement compared with the structure on sapphire substrate, thus realizing a highperformance device that does not show a salient current collapse up to 1 kV.

Paper Details

Date Published: 16 February 2009
PDF: 11 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721602 (16 February 2009); doi: 10.1117/12.807432
Show Author Affiliations
Nariaki Ikeda, Furukawa Electric Co., Ltd. (Japan)
Jiang Lee, Furukawa Electric Co., Ltd. (Japan)
Syuusuke Kaya, Furukawa Electric Co., Ltd. (Japan)
Masayuki Iwami, Furukawa Electric Co., Ltd. (Japan)
Takehiko Nomura, Furukawa Electric Co., Ltd. (Japan)
Sadahiro Katoh, Furukawa Electric Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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