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Proceedings Paper

Study of x-ray lithography mask distortion during electron-beam writing
Author(s): Hongyan Shang; Yongkun Wang
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Paper Abstract

Three-dimensional finite element model was developed to simulate the X-ray lithography mask distortion during electron-beam writing (EBW). Equivalent heat flux density method was proposed and the transient thermal stress simulation was done. The results show that the in-plane distortion (IPD) of the mask fluctuates with the time. The maximum value is 8.24 nm, and the direction is deviated from the electron beam center. The maximum out-of-plane distortion (OPD) is 9.75μm. The direction is normal to the pattern window, and occurred in the center of the beam center.

Paper Details

Date Published: 13 October 2008
PDF: 6 pages
Proc. SPIE 7129, Seventh International Symposium on Instrumentation and Control Technology: Optoelectronic Technology and Instruments, Control Theory and Automation, and Space Exploration, 712909 (13 October 2008); doi: 10.1117/12.807384
Show Author Affiliations
Hongyan Shang, Shanghai Maritime Univ. (China)
Yongkun Wang, Beijing Univ. of Aeronautics and Astronautics (China)


Published in SPIE Proceedings Vol. 7129:
Seventh International Symposium on Instrumentation and Control Technology: Optoelectronic Technology and Instruments, Control Theory and Automation, and Space Exploration

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