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Proceedings Paper

Anti-Stokes photoluminescence in GaN single crystals and heterostructures
Author(s): Suvranta K. Tripathy; Yujie J. Ding; Jacob B. Khurgin
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Paper Abstract

We review some of our recent results following the investigation of anti-Stokes photoluminescence (PL). Indeed, we have observed anti-Stokes photoluminescence from n-type free-standing GaN at room temperature. Such a process is induced by phonon-assisted absorption. When the excitation photon energy is sufficiently below the donor-acceptor transition energy, however, two-photon absorption becomes the dominant mechanism for anti-Stokes photoluminescence. By measuring the dependences of the photoluminescence spectra on temperature, excitation power, and excitation photon energy, we have demonstrated that donor-acceptor pair transition plays an important role in the generation of anti-Stokes photoluminescence. Our study could result in efficient laser cooling of semiconductors.

Paper Details

Date Published: 10 February 2009
PDF: 7 pages
Proc. SPIE 7228, Laser Refrigeration of Solids II, 722807 (10 February 2009); doi: 10.1117/12.807227
Show Author Affiliations
Suvranta K. Tripathy, Lehigh Univ. (United States)
Yujie J. Ding, Lehigh Univ. (United States)
Jacob B. Khurgin, Johns Hopkins Univ. (United States)

Published in SPIE Proceedings Vol. 7228:
Laser Refrigeration of Solids II
Richard I. Epstein; Mansoor Sheik-Bahae, Editor(s)

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