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Proceedings Paper

A study of Hg1-xCdxTe surfaces processed using inductively coupled plasma with CH4/H2/N2/Ar mixture
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Paper Abstract

Hydrogen-based dry plasmas, generated in inductively coupled plasma reactors have been demonstrated to be very effective in fabricating high fill-factor mesa of Hg1-xCd xTe multi-layer hetero-structure material for infrared focal plane array applications. To obtain reasonable dry etching process for Hg 1-xCd xTe, it is essential to investigate the physical, chemical, and electrical characteristics of the surface. This paper explores the effect of varying the plasma process parameters on the surface of Hg 1-xCd xTe. The surface chemical analysis was carried out using spot X-ray photoelectron spectroscopy (XPS), the surface roughness was measured by atomic force microscopy (AFM), and p-to-n type conversion depth was assessed by a reliable current-voltage test of a designed structure basing on material-chip technology concept and a convenient technology of cross-section surface potential imaging (SPM). At last, Hg 1-xCd xTe etched surfaces with roughness low and mechanical or electrical damage free were achieved.

Paper Details

Date Published: 9 February 2009
PDF: 8 pages
Proc. SPIE 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration, 71581B (9 February 2009); doi: 10.1117/12.807068
Show Author Affiliations
Wenhong Zhou, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Zhenhua Ye, Shanghai Institute of Technical Physics (China)
Xiaoning Hu, Shanghai Institute of Technical Physics (China)
Ruijun Ding, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 7158:
2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration

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