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Proceedings Paper

New approaches towards the understanding of the catastrophic optical damage process in in-plane diode lasers
Author(s): Jens W. Tomm; Mathias Ziegler; Vadim Talalaev; Clemens Matthiesen; Thomas Elsaesser; Marwan Bou Sanayeh; Peter Brick; Martin Reufer
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Paper Abstract

The microscopic processes accompanying the catastrophic optical damage process in semiconductor lasers are discussed. For 808 and 650 nm edge-emitting broad-area devices relevant parameters such as surface recombination velocities, bulk and front facet temperatures are determined and discussed. Facet temperatures vs. laser output and temperature profiles across laser stripes reveal a strong correlation to near-field intensity and degradation signatures. Furthermore, the dynamics of the fast catastrophic optical damage process is analyzed by simultaneous high-speed infrared thermal and optical imaging of the emitter stripe. The process is revealed as fast and spatially confined. It is connected with a pronounced impulsive temperature flash detected by a thermocamera.

Paper Details

Date Published: 3 February 2009
PDF: 9 pages
Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300V (3 February 2009); doi: 10.1117/12.806701
Show Author Affiliations
Jens W. Tomm, Max-Born-Institut (Germany)
Mathias Ziegler, Max-Born-Institut (Germany)
Vadim Talalaev, Max-Born-Institut (Germany)
Clemens Matthiesen, Max-Born-Institut (Germany)
Thomas Elsaesser, Max-Born-Institut (Germany)
Marwan Bou Sanayeh, OSRAM Opto Semiconductors GmbH (Germany)
Peter Brick, OSRAM Opto Semiconductors GmbH (Germany)
Martin Reufer, OSRAM Opto Semiconductors GmbH (Germany)

Published in SPIE Proceedings Vol. 7230:
Novel In-Plane Semiconductor Lasers VIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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