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Proceedings Paper

1060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality
Author(s): B. Sumpf; K.-H. Hasler; P. Adamiec; F. Bugge; J. Fricke; P. Ressel; H. Wenzel; G. Erbert; G. Tränkle
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Paper Abstract

High-brightness narrow line-width 1060 nm tapered lasers with an internal distributed Bragg reflector were realized. The devices reach a maximal output power of 12 W with a narrow spectral line-width below 40 pm (95% power). A nearly diffraction limited beam quality was measured up to a power of 10 W. The vertical structure is based on an InGaAs triple quantum well (TQW) active region embedded in a 4.8 μm broad AlGaAs super large optical cavity. This leads to a narrow vertical divergence of 15° (FWHM). Tapered devices were processed a total length of 6 mm consisting of 2 mm long ridge waveguide (including 1 mm DBR mirror) and 4 mm tapered sections. A full taper angle of 6° was manufactured. The input currents to both sections can be independently controlled. The devices had a conversion efficiency of about 50%. A first reliability test showed failure-free operation at 5 W without a deterioration of the beam quality and the spectral properties.

Paper Details

Date Published: 3 February 2009
PDF: 8 pages
Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72301E (3 February 2009); doi: 10.1117/12.806690
Show Author Affiliations
B. Sumpf, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
K.-H. Hasler, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
P. Adamiec, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
F. Bugge, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
J. Fricke, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
P. Ressel, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
H. Wenzel, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
G. Erbert, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
G. Tränkle, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)


Published in SPIE Proceedings Vol. 7230:
Novel In-Plane Semiconductor Lasers VIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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