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Proceedings Paper

Laser-produced plasma source system development
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Paper Abstract

This paper provides a review of development progress for a laser-produced-plasma (LPP) extreme-ultra-violet (EUV) source with performance goals targeted to meet joint requirements from all leading scanner manufacturers. Laser produced plasma systems have been developed as a viable approach for the EUV scanner light source for optical imaging of circuit features at sub-32nm and beyond nodes on the ITRS roadmap. Recent advances in the development of the system, its present average output power level and progress with various subcomponents is discussed. We present the latest results on peak EUV and average EUV power as well as stability of EUV output, measured in burst-mode operation at the nominal repetition rate of the light source. In addition, our progress in developing of critical components, such as normal-incidence EUV collector and liquid-target delivery system is described. We also report on dose stability, plasma position stability and EUV distribution at the output region of the source. This presentation reviews the experimental results obtained on systems with a focus on the topics most critical for an HVM source. The capability to scale LPP power by further development of the high power CO2 drive laser in order to increase duty cycle and duration of continuous light source operation is shown. Production systems with thermal management and capable of 5 sr light collection are being assembled and tested. A description of the development of a normal-incidence ellipsoidal collector is included. Improvements in substrate quality lead to increased EUV reflectance of the mirror. Results on the generation of liquid tin droplets as target material for efficient plasma generation are also described. The droplet generator serves as a key element in the precise and spatially stable delivery of small quantities of liquid tin at high repetition rates. We describe a protection module at the intermediate focus (IF) region of the source and imaging of the EUV distribution using a sub-aperture collector and a fluorescent screen. A path to meet requirements for production scanners planned well into the next decade is also presented.

Paper Details

Date Published: 4 December 2008
PDF: 12 pages
Proc. SPIE 7140, Lithography Asia 2008, 71401E (4 December 2008); doi: 10.1117/12.806648
Show Author Affiliations
David C. Brandt, Cymer, Inc. (United States)
Igor V. Fomenkov, Cymer, Inc. (United States)
Alex I. Ershov, Cymer, Inc. (United States)
William N. Partlo, Cymer, Inc. (United States)
David W. Myers, Cymer, Inc. (United States)
Norbert R. Böwering, Cymer, Inc. (United States)
Georgiy O. Vaschenko, Cymer, Inc. (United States)
Oleh V. Khodykin, Cymer, Inc. (United States)
Alexander N. Bykanov, Cymer, Inc. (United States)
Jerzy R. Hoffman, Cymer, Inc. (United States)
Christopher P. Chrobak, Cymer, Inc. (United States)
Shailendra N. Srivastava, Cymer, Inc. (United States)
David A. Vidusek, Cymer, Inc. (United States)
Silvia De Dea, Cymer, Inc. (United States)
Richard R. Hou, Cymer, Inc. (United States)

Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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