Share Email Print

Proceedings Paper

Hybrid silicon modulators
Author(s): Hui-Wen Chen; Ying-hao Kuo; J. E. Bowers
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A number of active elements have been demonstrated using the hybrid silicon evanescent platform, including lasers, amplifiers and detectors. In this paper, two types of hybrid silicon modulators, fulfilling the building blocks in optical communication on this platform, will be presented. A hybrid silicon electroabsorption modulator, suitable for high speed interconnects, with 10 dB extinction ratio at -5 V and 16 GHz modulation bandwidth is demonstrated. In addition a hybrid silicon Mach-Zehnder modulator utilizing carrier depletion in multiple quantum wells is proved with 2 V-mm voltage-length product, 150 nm optical bandwidth and a large signal modulation up to 10 Gb/s.

Paper Details

Date Published: 17 February 2009
PDF: 7 pages
Proc. SPIE 7220, Silicon Photonics IV, 722008 (17 February 2009); doi: 10.1117/12.805967
Show Author Affiliations
Hui-Wen Chen, Univ. of California, Santa Barbara (United States)
Ying-hao Kuo, Univ. of California, Santa Barbara (United States)
J. E. Bowers, Univ. of California, Santa Barbara (United States)

Published in SPIE Proceedings Vol. 7220:
Silicon Photonics IV
Joel A. Kubby; Graham T. Reed, Editor(s)

© SPIE. Terms of Use
Back to Top