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Proceedings Paper

Light extraction improvement of GaN-based light-emitting diodes using patterned undoped GaN bottom reflection gratings
Author(s): Simeon Trieu; Xiaomin Jin; Bei Zhang; Tao Dai; Kui Bao; Xiang-Ning Kang; Guo-Yi Zhang
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Paper Abstract

The Gallium Nitride (GaN) Light-Emitting-Diode (LED) bottom refection grating simulation and results are presented. A microstructure GaN bottom grating, either conical holes or cylindrical holes, was calculated and compared with the non-grating (flat) case. A time monitor was also placed just above the top of the LED to measure both time and power output from the top of the LED. Many different scenarios were simulated by sweeping three parameters that affected the structure of the micro-structure grating: unit cell period (Α) from 1 to 6 microns, unit cell width (w) from 1 to 6 microns, and unit cell grating height (d) from 50 to 200nm. The simulation results show that the cylindrical grating case has a 98% light extraction improvement, and the conical grating case has a 109% light extraction improvement compared to the flat plate case.

Paper Details

Date Published: 19 February 2009
PDF: 8 pages
Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72162Q (19 February 2009); doi: 10.1117/12.805480
Show Author Affiliations
Simeon Trieu, California Polytechnic State Univ. (United States)
Xiaomin Jin, California Polytechnic State Univ. (United States)
Peking Univ. (China)
Bei Zhang, Peking Univ. (China)
Tao Dai, Peking Univ. (China)
Kui Bao, Peking Univ. (China)
Xiang-Ning Kang, Peking Univ. (China)
Guo-Yi Zhang, Peking Univ. (China)

Published in SPIE Proceedings Vol. 7216:
Gallium Nitride Materials and Devices IV
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Joachim Piprek; Euijoon Yoon, Editor(s)

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