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Proceedings Paper

Extending KrF lithography beyond 80nm with the TWINSCAN XT:1000H 0.93NA scanner
Author(s): Wim de Boeij; Gerald Dicker; Marten de Wit; Frank Bornebroek; Mark Zellenrath; Harm-Jan Voorma; Bart Smeets; Rene Toussaint; Bart Paarhuis; Marteijn de Jong; Dirk Hellweg; Klaus Kornitzer
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Paper Abstract

KrF lithography is nowadays widely used for volume production spanning many device layers ranging from front-end 90nm to mid- & back-end layers in 45nm and 32nm ITRS imaging nodes. In this paper we discuss the addition of the new high-NA XT:1000H TWINSCAN(TM)scanning exposure tool to the KrF portfolio. We discuss advances in the system design and elaborate on its imaging and overlay performance. It is shown that stable tool performance supports 80nm resolution volume manufacturing. Extendibility with polarization towards sub-80nm is also addressed.

Paper Details

Date Published: 4 December 2008
PDF: 11 pages
Proc. SPIE 7140, Lithography Asia 2008, 71401B (4 December 2008); doi: 10.1117/12.805381
Show Author Affiliations
Wim de Boeij, ASML Netherlands B.V. (Netherlands)
Gerald Dicker, ASML Netherlands B.V. (Netherlands)
Marten de Wit, ASML Netherlands B.V. (Netherlands)
Frank Bornebroek, ASML Netherlands B.V. (Netherlands)
Mark Zellenrath, ASML Netherlands B.V. (Netherlands)
Harm-Jan Voorma, ASML Netherlands B.V. (Netherlands)
Bart Smeets, ASML Netherlands B.V. (Netherlands)
Rene Toussaint, ASML Netherlands B.V. (Netherlands)
Bart Paarhuis, ASML Netherlands B.V. (Netherlands)
Marteijn de Jong, ASML Netherlands B.V. (Netherlands)
Dirk Hellweg, Carl Zeiss SMT AG (Germany)
Klaus Kornitzer, Carl Zeiss SMT AG (Germany)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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