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Focus and dose control for high volume manufacturing
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Paper Abstract

We have proposed a new inspection method of in-line focus and dose controls for semiconductor high volume manufacturing. We referred to this method as the focus and dose line navigator (FDLN). Using FDLN, the deviations from the optimum focus and exposure dose can be obtained by measuring the topography of the resist pattern on a process wafer that was made under a single-exposure condition. Generally speaking, FDLN belongs to the technology of solving the inverse problem as scatterometry. The FDLN sequence involves following the two steps. Step 1:creating a focus exposure matrix (FEM) using a test wafer for building the model as supervised data. The model means the relational equation between the multi measurement results of resist patterns ( e.g. Critical dimension (CD), height, sidewall angle) and FEM's exposure conditions. Step 2: measuring the resist patterns on a manufacturing wafers and feeding the measurement data into the library to extrapolate focus and dose. In this paper, we explain again about the theorem of the FDLN and show experimental results using the many kind CDmeasurement tool(the advanced CD-AFM, optical CD measurement tool, the advanced CD-SEM and the Overlay measurement tool).

Paper Details

Date Published: 4 December 2008
PDF: 7 pages
Proc. SPIE 7140, Lithography Asia 2008, 71400Q (4 December 2008); doi: 10.1117/12.805314
Show Author Affiliations
Hideki Ina, Canon Inc. (Japan)
Koichi Sentoku, Canon Inc. (Japan)

Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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