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Proceedings Paper

Cluster optimization to improve CD control as an enabler for double patterning
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Paper Abstract

Given the increasingly stringent CD requirements for double patterning at the 32nm node and beyond, the question arises as to how best to correct for CD non-uniformity at litho and etch. For example, is it best to apply a dose correction over the wafer while keeping the PEB plate as uniform as possible, or should the dose be kept constant and PEB plate tuning used to correct. In this paper we present experimental data using both of these approaches, obtained on an ASML XT:1900Gi and Sokudo RF3S cluster.

Paper Details

Date Published: 4 December 2008
PDF: 8 pages
Proc. SPIE 7140, Lithography Asia 2008, 714023 (4 December 2008); doi: 10.1117/12.805239
Show Author Affiliations
Len Tedeschi, Sokuda Co., Ltd. (United States)
Craig Rosslee, Sokuda Co., Ltd. (United States)
David Laidler, IMEC (Belgium)
Philippe Leray, IMEC (Belgium)
Koen D'havé, IMEC (Belgium)


Published in SPIE Proceedings Vol. 7140:
Lithography Asia 2008
Alek C. Chen; Burn Lin; Anthony Yen, Editor(s)

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